High spectral tuning range of a modelocked InGaAs/InGaAsP MQW laser diode due to light hole gain contribution

Author

Hofmann, M. ; Weise, W. ; Elsasser, W. ; Göbel, E.O.

Author_Institution

Fachbereich Phys., Marburg Univ., Germany

Volume

6

Issue

11

fYear

1994

Firstpage

1306

Lastpage

1308

Abstract

We report on modelocking of an external cavity multi quantum well semiconductor laser with an extremely wide spectral tuning range. Pulse widths in the order of 30 ps were obtained spectrally tunable from 1448 to 1563 nm. The broadening of the gain spectrum is experimentally shown to be due to the additional contribution of the electron n=1 to the light hole n=1 transition. This conclusion is supported by numerical calculations.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mode locking; laser transitions; laser tuning; quantum well lasers; 1448 to 1563 nm; 30 ps; InGaAs-InGaAsP; external cavity multi quantum well semiconductor laser; extremely wide spectral tuning range; gain spectrum broadening; high spectral tuning range; light hole gain contribution; modelocked InGaAs/InGaAsP MQW laser diode; modelocking; numerical calculations; spectrally tunable; Charge carrier processes; Indium gallium arsenide; Laser modes; Laser transitions; Laser tuning; Quantum well devices; Quantum well lasers; Semiconductor lasers; Space vector pulse width modulation; Tunable circuits and devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.334821

Filename

334821