• DocumentCode
    1202930
  • Title

    Large estimated frequency response increase from deep potential well strained quantum well lasers

  • Author

    Ishikawa, H. ; Suemune, I.

  • Author_Institution
    Div. of Optoelectronics Res., Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    6
  • Issue
    11
  • fYear
    1994
  • Firstpage
    1315
  • Lastpage
    1317
  • Abstract
    Effect of potential well depth on the maximum modulation bandwith has been analyzed for strained quantum well lasers emitting at 1.3 μm. The frequency response depends largely on the potential well depth. The maximum modulation bandwith of a deep-potential single-well SCH laser designed on a ternary substrate is estimated to be 25 GHz while that of the conventional InP based laser is 15 GHz. In a four-well case, the estimated bandwith of a laser designed on a ternary substrate is estimated to be 80 GHz.
  • Keywords
    frequency response; laser theory; optical modulation; quantum well lasers; 1.3 mum; 15 GHz; 25 GHz; 80 GHz; deep potential well; frequency response; maximum modulation bandwith; potential well depth; strained quantum well lasers; ternary substrate; Frequency estimation; Frequency response; Indium phosphide; Optical design; Optical modulation; Potential well; Quantum well lasers; Semiconductor lasers; Stimulated emission; Substrates;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.334824
  • Filename
    334824