DocumentCode
1202930
Title
Large estimated frequency response increase from deep potential well strained quantum well lasers
Author
Ishikawa, H. ; Suemune, I.
Author_Institution
Div. of Optoelectronics Res., Fujitsu Labs. Ltd., Atsugi, Japan
Volume
6
Issue
11
fYear
1994
Firstpage
1315
Lastpage
1317
Abstract
Effect of potential well depth on the maximum modulation bandwith has been analyzed for strained quantum well lasers emitting at 1.3 μm. The frequency response depends largely on the potential well depth. The maximum modulation bandwith of a deep-potential single-well SCH laser designed on a ternary substrate is estimated to be 25 GHz while that of the conventional InP based laser is 15 GHz. In a four-well case, the estimated bandwith of a laser designed on a ternary substrate is estimated to be 80 GHz.
Keywords
frequency response; laser theory; optical modulation; quantum well lasers; 1.3 mum; 15 GHz; 25 GHz; 80 GHz; deep potential well; frequency response; maximum modulation bandwith; potential well depth; strained quantum well lasers; ternary substrate; Frequency estimation; Frequency response; Indium phosphide; Optical design; Optical modulation; Potential well; Quantum well lasers; Semiconductor lasers; Stimulated emission; Substrates;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.334824
Filename
334824
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