DocumentCode :
1202962
Title :
Exploiting Memory Soft Redundancy for Joint Improvement of Error Tolerance and Access Efficiency
Author :
Wang, Shuo ; Wang, Lei
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
Volume :
17
Issue :
8
fYear :
2009
Firstpage :
973
Lastpage :
982
Abstract :
Technology roadmap projects nanoscale multibillion- transistor integration in the coming years. However, on-chip memory becomes increasingly exposed to the dual challenges of device-level reliability degradation and architecture-level performance gap. In this paper, we propose to exploit the inherent memory soft (transient) redundancy for on-chip memory design. Due to the mismatch between fixed cache line size and runtime variations in memory spatial locality, many irrelevant data are fetched into the memory thereby wasting memory spaces. The proposed soft-redundancy allocated memory detects and utilizes these memory spaces for jointly achieving efficient memory access and effective error control. A runtime reconfiguration scheme is also proposed to further enhance the soft-redundancy allocation. Simulation results demonstrate 74.8% average error-control coverage ratio on the SPEC CPU2000 benchmarks with average of 59.5% and 41.3% reduction in memory miss rate and bandwidth usage, respectively, as compared to the existing memory techniques. Furthermore, the proposed technique is fully scalable with respect to various memory configurations.
Keywords :
cache storage; integrated circuit design; integrated circuit reliability; integrated memory circuits; SPEC CPU2000 benchmarks; access efficiency; device-level reliability degradation; error tolerance; fixed cache line size; memory detects; memory soft redundancy; on-chip memory design; runtime reconfiguration; soft-redundancy allocation; Access performance; VLSI design; bandwidth usage; cache memory; error tolerance; memory architecture; redundancy; reliability;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2008.2001743
Filename :
4804675
Link To Document :
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