Current modulation characteristics in optically-controlled field-effect transistor

Author

Shimizu, Y. ; Shimomura, K.

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan

Volume

6

Issue

11

fYear

1994

Firstpage

1338

Lastpage

1340

Abstract

A new type optically-controlled field-effect transistor was demonstrated. This device was composed of GaAs material system for the FET region and GaInAs/InP material system for the absorption region, and these regions were electrically isolated by polyimide and SiO₂. When 1.55 μm wavelength light entered the absorption region, about 120 μA of source-to-drain current was modulated due to the field-screening effect.

Keywords

III-V semiconductors; field effect integrated circuits; field effect transistors; gallium arsenide; integrated optoelectronics; optical fibre communication; 1.55 mum; 120 muA; FET region; GaAs; GaAs material system; GaInAs-InP; GaInAs/InP material system; SiO/sub 2/; absorption region; current modulation characteristics; electrically isolated; field-screening effect; optically-controlled field-effect transistor; polyimide; source-to-drain current; Absorption; FETs; Gallium arsenide; High speed optical techniques; Optical device fabrication; Optical devices; Optical interconnections; Optical materials; Optical modulation; Polyimides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.334832

Filename

334832