Title :
Current modulation characteristics in optically-controlled field-effect transistor
Author :
Shimizu, Y. ; Shimomura, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Abstract :
A new type optically-controlled field-effect transistor was demonstrated. This device was composed of GaAs material system for the FET region and GaInAs/InP material system for the absorption region, and these regions were electrically isolated by polyimide and SiO2. When 1.55 μm wavelength light entered the absorption region, about 120 μA of source-to-drain current was modulated due to the field-screening effect.
Keywords :
III-V semiconductors; field effect integrated circuits; field effect transistors; gallium arsenide; integrated optoelectronics; optical fibre communication; 1.55 mum; 120 muA; FET region; GaAs; GaAs material system; GaInAs-InP; GaInAs/InP material system; SiO/sub 2/; absorption region; current modulation characteristics; electrically isolated; field-screening effect; optically-controlled field-effect transistor; polyimide; source-to-drain current; Absorption; FETs; Gallium arsenide; High speed optical techniques; Optical device fabrication; Optical devices; Optical interconnections; Optical materials; Optical modulation; Polyimides;
Journal_Title :
Photonics Technology Letters, IEEE
