Title :
H3PO4 addition to slurry for Cu and TaN CMP
Author :
Kim, Sang-Yong ; Kim, Nam-Hoon ; Lim, Jong-Heun ; Chang, Eui-Goo
Author_Institution :
MIT CMP Team, ANAM Semicond. Inc., Kyunggi, South Korea
fDate :
5/1/2003 12:00:00 AM
Abstract :
Phosphoric acid (H3PO4) was evaluated as an accelerator of the tantalum nitride chemical-mechanical planarisation (CMP) process as well as a stabiliser of the hydrogen peroxide (H2O2). Also estimated were the dispersion stability and zeta potential of the abrasive with the contents of phosphoric acid. This approach may be useful for the development of the second step copper CMP slurry and hydrogen peroxide stability.
Keywords :
chemical mechanical polishing; copper; hydrogen compounds; metallisation; tantalum compounds; Cu; H2O2; H3PO4; TaN; abrasive slurry; chemical-mechanical planarisation; dispersion stability; hydrogen peroxide stabiliser; metallisation; phosphoric acid addition; process accelerator; zeta potential;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030491
