Title :
Characterization of GaAs MESFET gate capacitances
Author :
Shih, Chih-Ching ; Sheu, Bing J. ; Le, Huy M.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
6/1/1988 12:00:00 AM
Abstract :
An accurate and simple technique to characterize gate capacitances of small-geometry gallium-arsenide (GaAs) MESFETs is presented. The gate capacitive current is converted into voltage and detected by a lock-in amplifier. Subfemtofarad accuracy is achieved. A set of MESFETs with minimum channel length of 0.8 mu m and various channel widths has been accurately characterized. The gate-to-drain and gate-to-source capacitances show strong bias dependences.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; capacitance measurement; gallium arsenide; semiconductor device testing; 0.8 micron; GaAs; III-V semiconductor; MESFET; bias dependences; capacitance measurement; gate capacitances; minimum channel length; small geometry device; subfemtofarad accuracy; Amplifiers; Application specific integrated circuits; Capacitance measurement; Capacitors; Circuit testing; Gallium arsenide; MESFET circuits; Parasitic capacitance; Student members; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
