• DocumentCode
    1203910
  • Title

    Further insight into the physics and modeling of floating-body capacitorless DRAMs

  • Author

    Villaret, Alexandre ; Ranica, Rosella ; Malinge, Pierre ; Masson, Pascal ; Martinet, Bertrand ; Mazoyer, Pascale ; Candelier, P. ; Skotnicki, Thomas

  • Author_Institution
    STMicroelectron., Crolles, France
  • Volume
    52
  • Issue
    11
  • fYear
    2005
  • Firstpage
    2447
  • Lastpage
    2454
  • Abstract
    In this paper, we report on parasitic bipolar conduction occurring in floating-body effect based capacitor-less DRAMs. A way to include these effects into a previously developed model is presented. The enhanced model is then compared with electrical data realized on triple-well nMOSFET devices within the 26°C-100°C temperature range.
  • Keywords
    DRAM chips; MOSFET; integrated circuit modelling; 26 to 100 C; bipolar transistors; enhanced model; floating-body capacitorless DRAM; floating-body effect; parasitic bipolar conduction; triple-well nMOSFET devices; Bipolar transistors; Diodes; Electrodes; MOS devices; MOSFET circuits; Physics; Random access memory; Semiconductor device modeling; Space charge; Temperature distribution; Bipolar transistors; DRAM; MOS devices; floating-body effect; modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2005.857933
  • Filename
    1522682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1203910