Title :
Integrated bulk/SOI APD sensor: bulk substrate inspection with Geiger-mode avalanche photodiodes
Author :
Jackson, J.C. ; Donnelly, J. ; O´Neill, B. ; Kelleher, A.-M. ; Healy, G. ; Morrison, A.F. ; Mathewson, A.
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
fDate :
5/1/2003 12:00:00 AM
Abstract :
A rapid assessment of bulk silicon quality after removal of the silicon-on-insulator (SOI) and buried oxide layer using both plasma and wet etch is compared with standard p-epi silicon by comparing the performance of avalanche photodiodes (APD) operated in Geiger-mode. Plasma etching of the buried oxide shows lower dark counts than wet etched or standard p-epi substrates.
Keywords :
avalanche photodiodes; buried layers; etching; photodetectors; silicon-on-insulator; sputter etching; substrates; Geiger-mode avalanche photodiode; Si; bulk silicon substrate inspection; buried oxide layer; dark count; integrated bulk/SOI APD sensor; p-epi silicon substrate; plasma etching; wet etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030490
