Investigation and modeling the surface mobility of MOSFETs from -25 to +150°C

Author

Soppa, Winfried M. ; Wagemann, Hans-günther

Author_Institution

Inst. fuer Werkstoffe der Electrotech., Tech. Univ. Berlin, West Germany

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

970

Lastpage

977

Abstract

The surface mobility of n- and p-channel MOS transistors with varying densities of oxide charge and interface states has been investigated at low drain voltage in the temperature range from -25 to 150°C. Mobility values were extracted from DC transfer characteristics using the Pao-Sah drain current model and taking into account interface-state charge and short-channel effects. The dependence of the surface mobility is calculated using a partly diffuse scattering model. The influence of oxide and interface state charges on current transport is modeled by screened Coulomb potential scattering and by surface potential fluctuation, which saturates for charge densities larger than 6.25×10¹⁰ cm^-2

Keywords

carrier mobility; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; -25 to 150 C; DC transfer characteristics; Pao-Sah drain current model; Si; charge densities; current transport; densities of oxide charge; interface states; interface-state charge; low drain voltage; modeling; n-channel; p-channel; partly diffuse scattering model; screened Coulomb potential scattering; semiconductors; short-channel effects; surface mobility; surface potential fluctuation; temperature range; CMOS technology; Charge carrier processes; Computational modeling; Electron traps; Interface states; MOSFETs; Photonic band gap; Scattering; Silicon; Temperature dependence;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3353

Filename

3353