Recovery of threshold voltage after hot-carrier stressing

Author

Ong, Tong-Chern ; Levi, M. ; Ko, Ping-Keung ; Hu, Cheming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Santa Clara, CA, USA

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

978

Lastpage

984

Abstract

The recovery of threshold voltage due to high drain or gate voltage and the effects of hot-carrier stressing on the drain breakdown voltage of MOSFETs have been studied. A high oxide field causes slow recovery through tunneling detrapping of electrons in both p- and n-MOSFETs. For n-MOSFETs the mechanism of fast recovery is low-level hole injection at high V_D. Hot-carrier stressing at high V_G causes the drain breakdown voltage to decrease (walk-in). This results in enhanced hold injection, thus increasing the rate of subsequent recovery of V_t. The breakdown voltage increases and then decreases when stressed at low gate voltages

Keywords

elemental semiconductors; hot carriers; insulated gate field effect transistors; reliability; silicon; MOSFETs; drain breakdown voltage; drain voltage; effects of hot-carrier stressing; gate voltage; high oxide field; mechanism of fast recovery; recovery of threshold voltage; reliability; slow recovery; tunneling detrapping of electrons; walk-in; Breakdown voltage; Degradation; Electron traps; Etching; Hot carriers; Implants; Laboratories; MOSFET circuits; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3354

Filename

3354