Title :
A semi-analytical approach to the evaluation of threshold voltage in depletion MOS´s with nonuniformly doped substrates
Author :
Yu, Zhiqiang ; Zhao, Xiujun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fDate :
7/1/1988 12:00:00 AM
Abstract :
D.A. Antoniadis´ algorithm (ibid., vol.ED-31, no.3, p.303-7, 1984) is extended to cover the computation of threshold voltage for depletion or buried-channel MOSFETs. It is shown that a key factor in its evaluation, of the derivative of the integral charge of the mobile minority carriers in the substrate with respect to the gate-source bias, can easily be calculated using the concept of flat-band capacitance. The threshold voltage is thus computed without requiring strict numerical solution of Poisson´s equation, yet the accuracy is very good. This modified algorithm has been implemented in SUPREM III, and good agreement between simulation and experimental results has been achieved
Keywords :
electronic engineering computing; insulated gate field effect transistors; semiconductor device models; semiconductor doping; SUPREM III; buried-channel MOSFETs; depletion devices; flat-band capacitance; gate-source bias; integral charge; mobile minority carriers; modified algorithm; nonuniformly doped substrates; simulation; substrate; threshold voltage; Algorithm design and analysis; Capacitance; Computational modeling; Doping profiles; Helium; Impurities; Poisson equations; Semiconductor process modeling; Threshold voltage; Thyristors;
Journal_Title :
Electron Devices, IEEE Transactions on
