Title :
Interface quality of SiGe oxide prepared by RF plasma anodisation
Author :
Hall, Sebastian ; Eccleston, W. ; Zhang, Jian F. ; Werner, K.
fDate :
11/10/1994 12:00:00 AM
Abstract :
The latest progress in RF plasma anodisation of SiGe alloys at 80°C is reported. Compared with the authors´ previous results, considerable improvement in interfacial quality has been achieved. However, unlike the thermally grown samples. No negative fixed oxide charges were found
Keywords :
Ge-Si alloys; anodisation; interface states; interface structure; oxidation; semiconductor materials; semiconductor-insulator boundaries; sputter deposition; 80 C; RF plasma anodisation; SiGe; SiGe alloys; SiGe oxide; interface quality;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941315
