DocumentCode
1204505
Title
Interface quality of SiGe oxide prepared by RF plasma anodisation
Author
Hall, Sebastian ; Eccleston, W. ; Zhang, Jian F. ; Werner, K.
Volume
30
Issue
23
fYear
1994
fDate
11/10/1994 12:00:00 AM
Firstpage
1988
Lastpage
1989
Abstract
The latest progress in RF plasma anodisation of SiGe alloys at 80°C is reported. Compared with the authors´ previous results, considerable improvement in interfacial quality has been achieved. However, unlike the thermally grown samples. No negative fixed oxide charges were found
Keywords
Ge-Si alloys; anodisation; interface states; interface structure; oxidation; semiconductor materials; semiconductor-insulator boundaries; sputter deposition; 80 C; RF plasma anodisation; SiGe; SiGe alloys; SiGe oxide; interface quality;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941315
Filename
335630
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