• DocumentCode
    1204531
  • Title

    Au/Pt/Ti/Ni ohmic contacts to p-ZnTe

  • Author

    Mochizuki, K. ; Terano, Akihisa ; Momose, M. ; Taike, A. ; Kawata, Masakatsu ; Gotoh, J. ; Nakatsuka, Shoko

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo
  • Volume
    30
  • Issue
    23
  • fYear
    1994
  • fDate
    11/10/1994 12:00:00 AM
  • Firstpage
    1984
  • Lastpage
    1985
  • Abstract
    Ohmic contacts of Au/Pd/Ti/Ni to p-ZnTe show a minimum specific contact resistance of 10-6 Ωcm2 for a p-type doping level of 3×1019 cm-3 and at an annealing temperature of 300°C. The Ni and Ti layers are very effective in improving the electrical properties of these contact
  • Keywords
    II-VI semiconductors; annealing; contact resistance; gold; nickel; ohmic contacts; platinum; semiconductor-metal boundaries; titanium; zinc compounds; 300 C; Au-Pt-Ti-Ni-ZnTe; annealing temperature; electrical properties; ohmic contacts; p-type doping level; specific contact resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941326
  • Filename
    335633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1204531