• DocumentCode
    1204638
  • Title

    Efficient 3.3 μm light emitting diodes for detecting methane gas at room temperature

  • Author

    Krier, A.

  • Volume
    30
  • Issue
    23
  • fYear
    1994
  • fDate
    11/10/1994 12:00:00 AM
  • Firstpage
    1968
  • Lastpage
    1969
  • Abstract
    In0.97Ga0.3As light emitting diodes were grown on p-type InAs substrates by liquid phase epitaxy (LPE). These devises exhibit efficient infrared emission at 3.3 μm and can be used to fabricate infrared methane gas sensors for the cost-effective detection and monitoring of methane gas in various applications
  • Keywords
    III-V semiconductors; gallium arsenide; gas sensors; indium compounds; light emitting diodes; optical sensors; 3.3 μm light emitting diodes; 3.3 mum; In0.97Ga0.3As light emitting diodes; InAs substrates; InGaAs; cost-effective detection; infrared emission; infrared methane gas sensors; liquid phase epitaxy; methane gas detection; monitoring; p-type; room temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941360
  • Filename
    335643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1204638