Title :
Efficient 3.3 μm light emitting diodes for detecting methane gas at room temperature
fDate :
11/10/1994 12:00:00 AM
Abstract :
In0.97Ga0.3As light emitting diodes were grown on p-type InAs substrates by liquid phase epitaxy (LPE). These devises exhibit efficient infrared emission at 3.3 μm and can be used to fabricate infrared methane gas sensors for the cost-effective detection and monitoring of methane gas in various applications
Keywords :
III-V semiconductors; gallium arsenide; gas sensors; indium compounds; light emitting diodes; optical sensors; 3.3 μm light emitting diodes; 3.3 mum; In0.97Ga0.3As light emitting diodes; InAs substrates; InGaAs; cost-effective detection; infrared emission; infrared methane gas sensors; liquid phase epitaxy; methane gas detection; monitoring; p-type; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941360
