DocumentCode
1204755
Title
Two-dimensional multiwavelength surface emitting laser arrays fabricated by nonplanar MOCVD
Author
Koyama, Fumio ; Mukaihara, Toshikazu ; Hayashi, Yasuhiro ; Ohnoki, N. ; Hatori, Nobuaki ; Iga, Kenichi
Author_Institution
P&I Lab., Tokyo Inst. of Technol.
Volume
30
Issue
23
fYear
1994
fDate
11/10/1994 12:00:00 AM
Firstpage
1947
Lastpage
1948
Abstract
The authors demonstrate two dimensional multiwavelength vertical cavity surface emitting laser (VCSEL) arrays fabricated by using nonplanar metal organic chemical vapour deposition (MOCVD). The resonance wavelength of GaInAs/GaAs VCSELs grown on a patterned substrate is successfully controlled in the wavelength range over 45 nm on wafer. The threshold of multiwavelength VCSELs formed on the patterned substrate is as low as 3 mA
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; semiconductor growth; semiconductor laser arrays; surface emitting lasers; vapour phase epitaxial growth; 3 mA; GaInAs-GaAs; VCSEL arrays; chemical vapour deposition; metal organic CVD; multiwavelength type; nonplanar MOCVD; patterned substrate; resonance wavelength; surface emitting laser arrays; threshold current; two-dimensional arrays; vertical cavity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941305
Filename
335657
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