• DocumentCode
    1204834
  • Title

    Application of voltage contrast to potential mapping of polycrystalline semiconducting ceramics

  • Author

    Cabanel, C. ; Girard, P.

  • Author_Institution
    Lab. de Phys. du Solide, CNRS, Paris
  • Volume
    30
  • Issue
    23
  • fYear
    1994
  • fDate
    11/10/1994 12:00:00 AM
  • Firstpage
    1931
  • Lastpage
    1932
  • Abstract
    Voltage contrast was applied to the potential mapping of semiconducting ceramics. It was shown that electrical barriers are located at grain boundaries. Barrier heights were measured quantitatively in the voltage probing mode with a spacing limit of 2 μm and a 20 mV precision. From these data, it can be concluded that eddy currents are trapped essentially within each grain
  • Keywords
    ceramics; eddy currents; ferrites; grain boundaries; magnetic semiconductors; scanning electron microscopy; 2 micron; 20 mV; MnZn ferrite; MnZnFe2O4; SEM; barrier heights; eddy currents; grain boundaries; polycrystalline semiconducting ceramics; potential mapping; voltage contrast; voltage probing mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941347
  • Filename
    335666
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1204834