Title :
Application of voltage contrast to potential mapping of polycrystalline semiconducting ceramics
Author :
Cabanel, C. ; Girard, P.
Author_Institution :
Lab. de Phys. du Solide, CNRS, Paris
fDate :
11/10/1994 12:00:00 AM
Abstract :
Voltage contrast was applied to the potential mapping of semiconducting ceramics. It was shown that electrical barriers are located at grain boundaries. Barrier heights were measured quantitatively in the voltage probing mode with a spacing limit of 2 μm and a 20 mV precision. From these data, it can be concluded that eddy currents are trapped essentially within each grain
Keywords :
ceramics; eddy currents; ferrites; grain boundaries; magnetic semiconductors; scanning electron microscopy; 2 micron; 20 mV; MnZn ferrite; MnZnFe2O4; SEM; barrier heights; eddy currents; grain boundaries; polycrystalline semiconducting ceramics; potential mapping; voltage contrast; voltage probing mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941347
