Title :
A 12-Gb/s 11-mW Half-Rate Sampled 5-Tap Decision Feedback Equalizer With Current-Integrating Summers in 45-nm SOI CMOS Technology
Author :
Dickson, Timothy O. ; Bulzacchelli, John F. ; Friedman, Daniel J.
Author_Institution :
Thomas J. Watson Res. Center, IBM, Yorktown Heights, NY
fDate :
4/1/2009 12:00:00 AM
Abstract :
The design and experimental results of a low-power, low-area 5-tap decision feedback equalizer (DFE) implemented in a 45 nm SOI CMOS technology are reported. The DFE employs a low-power current-integrating summer with sampling front-end, which eliminates systematic frequency-dependent loss inherent in conventional integrating serial receivers. Further power and area savings are achieved through the use of a direct-feedback architecture and CMOS-style rail-to-rail clocking. The 5-tap DFE core occupies 73 times 50 mum2 and consumes 11 mW from a 1 V supply when equalizing 12 Gb/s data passed over a 30" channel with 15 dB of loss at 6 GHz.
Keywords :
CMOS integrated circuits; decision feedback equalisers; low-power electronics; silicon-on-insulator; summing circuits; CMOS-style rail-to-rail clocking; SOI CMOS technology; bit rate 12 Gbit/s; frequency 6 GHz; frequency-dependent loss; integrating serial receivers; loss 15 dB; low-area 5-tap decision feedback equalizer; low-power current-integrating summer; power 11 mW; size 45 nm; voltage 1 V; Adders; Bandwidth; CMOS technology; Circuits; Crosstalk; Decision feedback equalizers; Dielectric losses; Intersymbol interference; Nonlinear distortion; Timing; Current integration; SOI; decision feedback equalizer; serial link;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2009.2014733