Title :
High-efficiency, high-temperature mid-infrared (λ⩾4 μm) InAsSb/GaSb lasers
Author :
Le, H.Q. ; Turner, G.W. ; Ochoa, J.R. ; Sanchez, Abel
Author_Institution :
Lincoln Lab., MIT, Lexington, MA
fDate :
11/10/1994 12:00:00 AM
Abstract :
With 2 μm pumping, a 4 μm InAsSb/GaSb double heterostructure laser operated at 86.5 K yielded 11% slope power efficiency and 16 mW CW power. Pulsed operation up to 211 K was observed. The threshold and efficiency were studied as functions of temperature and pump wavelength
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical pumping; semiconductor lasers; 11 percent; 16 mW; 2 μm pumping; 2 mum; 211 K; 4 mum; 86.5 K; CW power; InAsSb-GaSb; InAsSb/GaSb lasers; double heterostructure laser; efficiency; high-efficiency; high-temperature; mid-infrared; pulsed operation; pump wavelength; slope power efficiency; temperature; threshold;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941301
