DocumentCode
1205040
Title
High-efficiency, high-temperature mid-infrared (λ⩾4 μm) InAsSb/GaSb lasers
Author
Le, H.Q. ; Turner, G.W. ; Ochoa, J.R. ; Sanchez, Abel
Author_Institution
Lincoln Lab., MIT, Lexington, MA
Volume
30
Issue
23
fYear
1994
fDate
11/10/1994 12:00:00 AM
Firstpage
1944
Lastpage
1945
Abstract
With 2 μm pumping, a 4 μm InAsSb/GaSb double heterostructure laser operated at 86.5 K yielded 11% slope power efficiency and 16 mW CW power. Pulsed operation up to 211 K was observed. The threshold and efficiency were studied as functions of temperature and pump wavelength
Keywords
III-V semiconductors; gallium compounds; indium compounds; optical pumping; semiconductor lasers; 11 percent; 16 mW; 2 μm pumping; 2 mum; 211 K; 4 mum; 86.5 K; CW power; InAsSb-GaSb; InAsSb/GaSb lasers; double heterostructure laser; efficiency; high-efficiency; high-temperature; mid-infrared; pulsed operation; pump wavelength; slope power efficiency; temperature; threshold;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941301
Filename
335695
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