DocumentCode
1205049
Title
Low threshold half-wave vertical-cavity lasers
Author
Huffaker, D.L. ; Shin, Jeyong ; Deppe, Dennis G.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
Volume
30
Issue
23
fYear
1994
fDate
11/10/1994 12:00:00 AM
Firstpage
1946
Lastpage
1947
Abstract
Data are presented characterising half-wavelength vertical-cavity surface-emitting lasers defined by a native-oxide ring in which the native oxide is 200 Å from the single quantum well. The lowest threshold is achieved with a 2 μm square active region, with a minimum threshold current of 91 μA continuous-wave at room temperature
Keywords
laser cavity resonators; quantum well lasers; surface emitting lasers; 2 mum; 200 A; 91 muA; active region; continuous-wave; half-wavelength vertical-cavity surface-emitting lasers; low threshold half-wave vertical-cavity lasers; minimum threshold current; native-oxide ring; room temperature; single quantum well;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941348
Filename
335696
Link To Document