Title :
Low threshold half-wave vertical-cavity lasers
Author :
Huffaker, D.L. ; Shin, Jeyong ; Deppe, Dennis G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
fDate :
11/10/1994 12:00:00 AM
Abstract :
Data are presented characterising half-wavelength vertical-cavity surface-emitting lasers defined by a native-oxide ring in which the native oxide is 200 Å from the single quantum well. The lowest threshold is achieved with a 2 μm square active region, with a minimum threshold current of 91 μA continuous-wave at room temperature
Keywords :
laser cavity resonators; quantum well lasers; surface emitting lasers; 2 mum; 200 A; 91 muA; active region; continuous-wave; half-wavelength vertical-cavity surface-emitting lasers; low threshold half-wave vertical-cavity lasers; minimum threshold current; native-oxide ring; room temperature; single quantum well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941348
