Title :
Low voltage characteristics of InGaAs/InP composite channel HEMT structure fabricated by optical lithography
Author :
Strahle, S. ; Henle, B. ; Kohn, Erhard
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ.
fDate :
11/10/1994 12:00:00 AM
Abstract :
A 0.65 μm gate length composite channel InP-HEMT for low bias use in mobile communication is discussed. At VD=1.6 V a record fmax/fT=2.6 in combination with fT L8=39 GHz μm or 2.45×107 cm/s, which is essentially above the collision dominated value, is obtained. The fT is already higher than 40 GHz (fTLg =26 GHz μm) at VD=0.75 V with an associated fmax/fT=1.6
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; mobile communication; photolithography; 0.75 V; 1.6 V; 40 GHz; InGaAs-InP; InGaAs/InP composite channel HEMT structure; collision dominated value; low bias; low voltage characteristics; mobile communication; optical lithography;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941346
