Title :
Separation of irradiation induced gate oxide charge and interface traps effects in power VDMOSFETs
Author :
Stojadinovic, Ninoslav ; Golubovic, S. ; Davidovic, V.
Author_Institution :
Fac. of Electron. Eng., Nis Univ.
fDate :
11/10/1994 12:00:00 AM
Abstract :
Irradiation induced degradation mechanisms in power VDMOSFETs are analysed using the subthreshold-midgap and single-transistor mobility methods. It is shown that the irradiation induced degradation of power VDMOSFETs is due to a significant increase of the gate oxide charge and somewhat smaller increase of the interface traps
Keywords :
electron traps; power MOSFET; radiation effects; radiation hardening; semiconductor device noise; gate oxide charge; interface traps; irradiation induced degradation; irradiation induced degradation mechanisms; irradiation induced gate oxide charge; power VDMOSFETs; single-transistor mobility; subthreshold-midgap;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941309
