DocumentCode :
1205159
Title :
The determination of S-parameters from the poles of voltage-gain transfer function for RF IC design
Author :
Lu, Shey-Shi ; Lin, Yo-Sheng ; Chiu, Hung-Wei ; Chen, Yu-Chang ; Meng, Chin-Chun
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
52
Issue :
1
fYear :
2005
Firstpage :
191
Lastpage :
199
Abstract :
A method for estimating the S-parameters of active circuits using hand analysis is introduced. This method involves the determination of S-parameters from the poles of voltage-gain transfer function. It is found that the information on the frequency responses of input/output return loss, input/output impedance, and reverse isolation is all hidden in the poles or equivalently in the denominator of the voltage-gain transfer function of a circuit system. The method has been applied to three commonly used RF circuit configurations and one fabricated CMOS wide-band amplifier to illustrate the usefulness of the proposed theory.
Keywords :
CMOS integrated circuits; S-parameters; active networks; frequency response; integrated circuit design; poles and zeros; radiofrequency amplifiers; radiofrequency integrated circuits; transfer functions; wideband amplifiers; CMOS wide-band amplifier; RF IC design; RF circuit configuration; S-parameters; active circuits; broad-band amplifier; voltage-gain transfer function; Active circuits; Broadband amplifiers; Circuit analysis; Impedance; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Scattering parameters; Transfer functions; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2004.840084
Filename :
1377554
Link To Document :
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