Title :
High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels
Author :
Choi, C.-S. ; Kang, H.-S. ; Woo-Young Choi ; Kim, Hyun-Jung ; Choi, W.-J. ; Kim, Do-Hyeon ; Jang, K.-C. ; Seo, K.-S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
fDate :
6/1/2003 12:00:00 AM
Abstract :
The high optical responsivity of the InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels is reported. Experimental results verify that the photovoltaic effect causing the effective decrease of threshold voltage is responsible for the photoresponse to a 1.55-μm optical illumination.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; infrared detectors; phototransistors; photovoltaic effects; 1.55 micron; GaAs; GaAs substrate; InAlAs-InGaAs; InAlAs-InGaAs metamorphic high-electron mobility transistor; composite channels; high optical responsivity; optical illumination; photoresponse; photovoltaic effect; threshold voltage; Gallium arsenide; HEMTs; Lighting; MODFETs; Optical noise; Optical receivers; Optical sensors; Substrates; Threshold voltage; mHEMTs;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.811339
