• DocumentCode
    1205581
  • Title

    Simultaneous Determination of Transistor Noise, Gain, and Scattering Parameters for Amplifier Design through Noise Figure Measurements Only

  • Author

    Martines, Giovanni ; Sannino, Mario

  • Issue
    1
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    89
  • Lastpage
    91
  • Abstract
    A method for the simultaneous determination of transistor noise and gain parameters through noise figure measurements has been presented recently. An improved version of the method is presented here which can also yield all the scattering parameters needed for designing amplifiers. By means of a proper (computer-aided) data-processing technique, s11, s22, |s12| , |S21|, and s12s21 are determined. As experimental verifications, the characterization of a GaAs MESFET versus frequency (4-8 GHz) is reported.
  • Keywords
    Attenuators; Frequency measurement; Gain measurement; Noise figure; Noise generators; Noise measurement; Power measurement; Scattering parameters; Testing; Tuners;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.1985.4315265
  • Filename
    4315265
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1205581