Title :
Surface texturing for Maxwell-Wagner polarisation engineering
Author :
Prodromakis, Themistoklis ; Papavassiliou, Christos
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. London, London
fDate :
3/1/2009 12:00:00 AM
Abstract :
Surface texturing techniques that are applied in laminar structures to extend the supported Maxwell-Wagner polarisation are described. The roughness of the semiconductor surface is increased, resulting in a subdivision of the large Si-SiO2 interfaces to a multitude of small interfaces. Measured results demonstrate that this surface texturing has a direct effect on the relaxation of the Maxwell-Wagner polarisation and, in particular, at the interfacial to atomic polarisation transition.
Keywords :
elemental semiconductors; interface structure; polarisation; silicon; silicon compounds; surface roughness; surface texture; Maxwell-Wagner polarisation engineering; Si-SiO2; atomic polarisation transition; laminar structures; semiconductor surface roughness; surface texturing;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl:20080049