DocumentCode
1206202
Title
Application of the Quantized Hall Effect to a New Resistance Standard at VSL
Author
Van Der Wel, W. ; Harmans, Kees J.P.M. ; Kaarls, Robert ; Mooij, J.E.
Issue
2
fYear
1985
fDate
6/1/1985 12:00:00 AM
Firstpage
314
Lastpage
316
Abstract
A description is given of the setup for quantized Hall effect measurements. Preliminary results, obtained with MOCVD grown GaAs-AIGaAs heterojunctions, are presented. These include temperature dependence of the quantized Hall resistance. Overall accuracy is estimated to be better than 0.2 ppm.
Keywords
Circuits; Density estimation robust algorithm; Electrical resistance measurement; Hall effect; Heterojunctions; Laboratories; MOCVD; Magnetic field measurement; Noise level; Temperature dependence;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/TIM.1985.4315333
Filename
4315333
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