Title :
1-GHz, 200°C, SiC MESFET Clapp oscillator
Author :
Schwartz, Zachary D. ; Ponchak, George E.
Author_Institution :
NASA Glenn Res. Center, Analex Corp., Cleveland, OH, USA
Abstract :
A SiC Clapp oscillator fabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high-temperature operation at 1GHz. The oscillator operated from 30°C to 200°C with an output power of 21.8dBm at 1GHz and 200°C. The efficiency at 200° C is 15%. The frequency variation over the temperature range is less than 0.5%.
Keywords :
MESFET integrated circuits; alumina; high-temperature techniques; microwave oscillators; silicon compounds; wide band gap semiconductors; 1 GHz; 30 to 200 C; MESFET Clapp oscillator; SiC; alumina substrate; chip capacitor; frequency variation; high-temperature operation; spiral inductor; Capacitors; Ceramics; Circuit simulation; Gold; Inductors; MESFETs; Oscillators; Silicon carbide; Spirals; Temperature; High temperature; SiC; oscillator;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.858995
