DocumentCode
1206833
Title
1-GHz, 200°C, SiC MESFET Clapp oscillator
Author
Schwartz, Zachary D. ; Ponchak, George E.
Author_Institution
NASA Glenn Res. Center, Analex Corp., Cleveland, OH, USA
Volume
15
Issue
11
fYear
2005
Firstpage
730
Lastpage
732
Abstract
A SiC Clapp oscillator fabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high-temperature operation at 1GHz. The oscillator operated from 30°C to 200°C with an output power of 21.8dBm at 1GHz and 200°C. The efficiency at 200° C is 15%. The frequency variation over the temperature range is less than 0.5%.
Keywords
MESFET integrated circuits; alumina; high-temperature techniques; microwave oscillators; silicon compounds; wide band gap semiconductors; 1 GHz; 30 to 200 C; MESFET Clapp oscillator; SiC; alumina substrate; chip capacitor; frequency variation; high-temperature operation; spiral inductor; Capacitors; Ceramics; Circuit simulation; Gold; Inductors; MESFETs; Oscillators; Silicon carbide; Spirals; Temperature; High temperature; SiC; oscillator;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2005.858995
Filename
1525056
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