Title :
Gain and threshold-current calculation of V-groove quantum-wire InGaAs-InP laser
Author :
Gvozdic, Dejan M. ; Nenadovic, Nebojsa M. ; Schlachetzki, Andreas
Author_Institution :
Inst. fur Halbleitertechnik, Technische Univ. Braunschweig, Germany
fDate :
12/1/2002 12:00:00 AM
Abstract :
This paper presents material-gain and threshold-current calculation of a InGaAs-InP quantum-wire laser in the framework of the k·p method, with included conduction-band nonparabolicity for the first time. The method for band-structure calculation is based on conformal mapping and Fourier expansion. The calculation shows that high material gain (7000 cm-1) can be achieved at room temperature for polarization along the free axis of the quantum wire. We propose an optimized laser structure, based on a stack of quantum wires.
Keywords :
III-V semiconductors; band structure; conduction bands; gallium arsenide; indium compounds; k.p calculations; laser theory; quantum well lasers; semiconductor device models; semiconductor quantum wires; Fourier expansion; InGaAs-InP; V-groove quantum-wire InGaAs-InP laser; band-structure calculation; conformal mapping; high material gain; included conduction-band nonparabolicity; k·p method; laser gain; material-gain calculation; optimized laser structure; quantum wire; quantum wire stack; room temperature; threshold-current calculation; Laser theory; Optical fiber communication; Optical materials; Optical modulation; Optical sensors; Optical transmitters; Orbital calculations; Quantum well lasers; Threshold current; Wire;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2002.805106
