A 32-GHz non-uniform distributed amplifier in 0.18-μm CMOS

Author

Liang-Hung Lu ; Tai-Yuan Chen ; Yi-Jay Lin

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

15

Issue

11

fYear

2005

Firstpage

745

Lastpage

747

Abstract

This letter presents a fully integrated distributed amplifier in a standard 0.18-μm CMOS technology. By employing a nonuniform architecture for the synthetic transmission lines, the proposed distributed amplifier exhibits enhanced performance in terms of gain and bandwidth. Drawing a dc current of 45mA from a 2.2-V supply voltage, the fabricated circuit exhibits 9.5-dB pass-band gain with a bandwidth of 32GHz while maintaining good input and output return losses over the entire frequency band. With a compact layout technique, the chip size of the distributed amplifier including the testing pads is 940×860μm².

Keywords

CMOS integrated circuits; MMIC amplifiers; distributed amplifiers; transmission lines; travelling wave amplifiers; 0.18 micron; 2.2 V; 32 GHz; 45 mA; 9.5 dB; CMOS technology; gain-bandwidth product; monolithic microwave integrated circuit; nonuniform architecture; nonuniform distributed amplifier; nonuniform synthetic transmission lines; testing pad; traveling-wave amplifiers; Bandwidth; CMOS technology; Cutoff frequency; Distributed amplifiers; Distributed parameter circuits; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave transistors; Performance gain; Broadband; CMOS distributed amplifiers; gain-bandwidth product; monolithic microwave integrated circuit (MMIC); nonuniform synthetic transmission lines; traveling-wave amplifiers;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.858986

Filename

1525061