A Simplified Error Model for Accurate Measurement of High-Frequency Transistor S Parameters

This paper presents a simplified error model for error correction for the measurement of S parameters in high-frequency transistors. The simplification process involves zero order approximation of the transistor parameters S21 and S12, and a one time, rather than successive iteration, approximation of the reflection parameters S11 and S22. The simplified error model can be programmed within the capacity of a medium level handheld programmable calculator.