DocumentCode :
1207035
Title :
An embedded 0.8 V/480 μW 6b/22 MHz flash ADC in 0.13-μm digital CMOS process using a nonlinear double interpolation technique
Author :
Lin, Jerry ; Haroun, Baher
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Volume :
37
Issue :
12
fYear :
2002
fDate :
12/1/2002 12:00:00 AM
Firstpage :
1610
Lastpage :
1617
Abstract :
For high-data-rate wireless communication, low-voltage baseband converters integrated with DSP in deep submicrometer processes are area- and power-efficient. Through careful architecture selections and circuit techniques, this paper demonstrates a low-voltage (0.8 V), low-power (480 μW), 6-b/22-MHz flash-interpolation ADC which occupies 0.3 mm2 and achieves 33 dB SNDR and 47 dB SFDR. The power efficiency of this converter is 0.6 pJ/conv-step which compares favorably with all published results. We also introduce a nonlinear double interpolation technique that enables the use of a 0.13-μm standard digital CMOS process without special resistors.
Keywords :
CMOS integrated circuits; VLSI; analogue-digital conversion; interpolation; low-power electronics; 0.13 micron; 0.8 V; 22 MHz; 480 muW; 6 bit; DSP; SFDR; SNDR; architecture selections; circuit techniques; deep submicrometer processes; digital CMOS process; flash-interpolation ADC; low-voltage baseband converters; nonlinear double interpolation technique; power efficiency; Baseband; CMOS process; Circuits; Costs; Digital signal processing; Digital signal processing chips; High power amplifiers; Interpolation; Noise generators; Radio frequency;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2002.804333
Filename :
1088087
Link To Document :
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