Large signal model for analysis and design of HEMT gate mixer

Author

Allam, R. ; Kolanowski, C. ; Theron, D. ; Crosnier, Y.

Author_Institution

Inst. Electron. de Microelectron., Lille I Univ., Villeneuve d´´Ascq, France

Volume

4

Issue

12

fYear

1994

Firstpage

405

Lastpage

407

Abstract

This paper examines the problem of modeling HEMT´s for calculations of conversion gain and intermodulation. An accurate and simple large signal model of discrete HEMT´s has been developed. The nonlinear elements of the model are assumed to depend exclusively on the gate-source voltage. The interpolation of the measured data, using polynomial expressions, provides a description of the HEMT´s nonlinearities in a CAD software. Based on the model, a hybrid HEMT gate mixer has been built. The accuracy of the model has been verified, and we obtained good agreement between the measured and simulated results.<>

Keywords

HEMT circuits; equivalent circuits; high electron mobility transistors; intermodulation; interpolation; microwave field effect transistors; microwave mixers; nonlinear network analysis; nonlinear network synthesis; semiconductor device models; CAD software; HEMT gate mixer; HEMT nonlinearities; conversion gain; intermodulation; interpolation; large signal model; modeling; polynomial expressions; Circuits; HEMTs; Intrusion detection; Microwave measurements; Polynomials; Radio frequency; Signal analysis; Signal design; Transconductance; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.336228

Filename

336228