Title :
Characterization and CMRR Modeling of a Carbon-Nanotube Field-Emission Differential Amplifier
Author :
Wong, Yong Mui ; Kang, Weng Poo ; Davidson, Jimmy L. ; Kerns, David V. ; Huang, J.H. ; Galloway, Kenneth F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN
fDate :
5/1/2009 12:00:00 AM
Abstract :
A novel vacuum field-emission differential amplifier (diff-amp) based on carbon-nanotube (CNT) emitters has been developed, modeled, and its ac performance characterized. A dual-mask microfabrication process was employed to achieve a single-chip diff-amp by integrating matched CNT field-emission triodes with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well matched in device characteristics. The measured ac common-mode-rejection ratio (CMRR) of the diff-amp was ~ 50 dB. The proposed CMRR semianalytical model was validated with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve high-temperature and radiation-tolerant vacuum integrated circuits.
Keywords :
anodes; carbon nanotubes; differential amplifiers; electron field emission; nanotube devices; triodes; vacuum microelectronics; C; CMRR modeling; CNT emitter; ac common-mode-rejection ratio; built-in split gates; carbon nanotube field-emission differential amplifier; dual-mask microfabrication process; integrated anodes; matched CNT field-emission triode; semianalytical model; single-chip diff-amp; vacuum field-emission diff-amp; vacuum integrated circuits; Anodes; Carbon nanotubes; Differential amplifiers; Electron tubes; High speed integrated circuits; Integrated circuit measurements; Logic gates; Microelectronics; Operational amplifiers; Plasma temperature; Carbon nanotube (CNT); differential amplifier (diff-amp); field emission; integrated circuits (ICs);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2015418
