DocumentCode
1207422
Title
An Analysis of Steady-State Nuclear Radiation Damage of Tunnel Diodes
Author
Dowdey, J.E. ; Travis, C.M.
Author_Institution
Physics Department Arlington State College Arlington, Texas
Volume
11
Issue
5
fYear
1964
Firstpage
55
Lastpage
59
Abstract
Eighteen 2.2-ma and four 10-ma P-substrate (N-on-P), and eighteen 2.2-ma and four 10-ma N-substrate (P-on-N) substrate tunnel diodes were irradiated to 1.5 ?? 1016 n/cm2 (E > 0.3 Mev) and 2.2 1010 ergs/gm-(C) to investigate their radiation-resistance. Peak currents were found to remain constant under these exposures while valley currents increased due to the increase in excess current. P-substrate diodes were found to be the more radiation-resistant, degrading about one half as much as the N-substrate units.
Keywords
Data systems; Degradation; Diodes; Electronic components; Electronic equipment testing; Inductors; Performance evaluation; Reactor instrumentation; Steady-state; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS2.1964.4315475
Filename
4315475
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