Evaluation of Hall Effect Multipliers in a Radiation Environment

Indium Arsenide (InAs) and Indium Antimonide (InSb) Hall effect devices were tested in gamma and neutron radiation to determine if they were suitable for use in the radiation environment experienced in a typical SNAP system. Total exposures of 5 ?? 107 R (Co-60 gammas) and 1015 nvt (E > 0.1 Mev) were accumulated on one group of devices. Effects of gamma radiation were negligible; however, neutrons did cause measurable changes in Hall coefficient (RH) and input resistance (Rin). A simple method of compensating for parameter changes caused by radiation is suggested, which keeps errors in the multiplying constant less than 1% for InAs devices and less than 3% for InSb devices.