A new punchthrough current model based on the voltage-doping transformation

Author

Skotnicki, Tomasz ; Merckel, Gérard ; Pedron, Thierry

Author_Institution

CNET-CNS, Meylan, France

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

1076

Lastpage

1086

Abstract

The punchthrough phenomenon is investigated by a 2-D numerical analysis. A physical interpretation that relates this phenomenon to the drain-field-induced reduction in doping concentration is proposed. This interpretation allows a better understanding of the mechanism of surface and bulk punchthrough flows and provides a guideline for the quantitative solution to the problem. The relation between the reduced N* and real N dopings (called the voltage-doping transformation, or VDT) is derived from the two-dimensional Poisson equation. It is shown that as a result of the VDT, it is possible to accurately calculate the actual barrier heights as a function of applied voltages and channel length using the well-known long-channel expressions where N is substituted by N*

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor doping; 2D numerical analysis; MOSFET; applied voltages; barrier height calculation; bulk punchthrough flows; channel length; doping concentration; drain-field-induced reduction; long-channel expressions; punchthrough current model; semiconductor devices; surface punchthrough flow; two-dimensional Poisson equation; voltage-doping transformation; Analytical models; Doping profiles; Electric variables; Leakage current; MOSFET circuits; Numerical simulation; Poisson equations; Semiconductor process modeling; Surface treatment; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3367

Filename

3367