Analytical modeling and design criteria for traveling-wave FET amplifiers

Author

D´Agostino, Stefano ; d´Inzeo, Guglielmo ; Tudini, Luca

Author_Institution

Dept. of Electron., Rome Univ., Italy

Volume

40

Issue

2

fYear

1992

Firstpage

202

Lastpage

208

Abstract

The theoretical modeling and design of a traveling-wave FET are described. The device shows the capability of wide-bandwidth performance and high gain and could be useful in power applications. The proposed analytical model considers the full mode effects of the three-coupled transmission lines and an accurate analysis of the FET model in the traveling-wave amplifier. Starting from electrode dimensions and active zone doping, such a model allows one to calculate the scattering parameters. Thus, it is possible to analyze the device as a six port network in a circuit analysis program.<>

Keywords

Schottky gate field effect transistors; microwave amplifiers; semiconductor device models; solid-state microwave devices; wideband amplifiers; active zone doping; analytical modeling; circuit analysis program; design criteria; full mode effects; high gain; scattering parameters; six port network; three-coupled transmission lines; traveling-wave FET amplifiers; traveling-wave amplifier; wide-bandwidth performance; Analytical models; Broadband amplifiers; Distributed parameter circuits; Doping; Electrodes; FETs; Performance gain; Power transmission lines; Semiconductor process modeling; Transmission line theory;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.120091

Filename

120091