Title :
Experimental determination of time constants for ion-induced transients in static memories
Author :
Weaver, Harry T. ; Browning, John S. ; Shafer, Blynn D. ; Fu, J.S.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
Time constants for voltage transients following high energy ion strikes on static memories are determined from a series of experiments measuring cross sections for single-event upset. For a given strike location within the circuit, the transient time constant saturates with increasing deposited energy. These maximum transients, for strikes at the two known sensitive areas, `off´ p-channel drain and `off´ n-channel drain, were measured at 6 and 0.8 ns, respectively
Keywords :
integrated memory circuits; ion beam effects; random-access storage; transient response; high energy ion strikes; ion-induced transients; single-event upset; static memories; time constants; voltage transients; Area measurement; Circuits; Ionization; Logic; Modems; Random access memory; Single event upset; Switches; Time measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
