Title :
Fully automated on-wafer noise characterization of GaAs MESFETs and HEMTs
Author :
Archer, John W. ; Batchelor, Robert A.
Author_Institution :
CSIRO, Marsfield, NSW, Australia
fDate :
2/1/1992 12:00:00 AM
Abstract :
A technique is described that permits the rapid determination of all four noise parameters of a MESFET or HEMT at wafer level. The fully automated procedure, which has been implemented in the 2-8 GHz range, uses 16 accurately measured, very repeatable source impedance standards. The standards have been selected for optimum coverage of the input impedance plane to result in stable and rapidly convergent least-squares solutions for the minimum noise figure, optimum source impedance, and noise resistance of practical devices. The resultant system is very stable and produces accurate noise parameters for a wide range of devices
Keywords :
III-V semiconductors; Schottky gate field effect transistors; automatic test equipment; computerised instrumentation; electric noise measurement; gallium arsenide; high electron mobility transistors; microwave measurement; production testing; semiconductor device testing; solid-state microwave devices; 2 to 8 GHz; GaAs; HEMTs; MESFETs; automated on-wafer noise characterization; four noise parameters; minimum noise figure; noise resistance; optimum source impedance; production testing; repeatable source impedance standards; semicondcutors; wafer level measurement; Electrical resistance measurement; Gallium arsenide; HEMTs; Impedance measurement; MESFETs; MODFETs; Microwave devices; Noise figure; Noise measurement; Packaging;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
