Fully automated on-wafer noise characterization of GaAs MESFETs and HEMTs

Author

Archer, John W. ; Batchelor, Robert A.

Author_Institution

CSIRO, Marsfield, NSW, Australia

Volume

40

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

209

Lastpage

216

Abstract

A technique is described that permits the rapid determination of all four noise parameters of a MESFET or HEMT at wafer level. The fully automated procedure, which has been implemented in the 2-8 GHz range, uses 16 accurately measured, very repeatable source impedance standards. The standards have been selected for optimum coverage of the input impedance plane to result in stable and rapidly convergent least-squares solutions for the minimum noise figure, optimum source impedance, and noise resistance of practical devices. The resultant system is very stable and produces accurate noise parameters for a wide range of devices

Keywords

III-V semiconductors; Schottky gate field effect transistors; automatic test equipment; computerised instrumentation; electric noise measurement; gallium arsenide; high electron mobility transistors; microwave measurement; production testing; semiconductor device testing; solid-state microwave devices; 2 to 8 GHz; GaAs; HEMTs; MESFETs; automated on-wafer noise characterization; four noise parameters; minimum noise figure; noise resistance; optimum source impedance; production testing; repeatable source impedance standards; semicondcutors; wafer level measurement; Electrical resistance measurement; Gallium arsenide; HEMTs; Impedance measurement; MESFETs; MODFETs; Microwave devices; Noise figure; Noise measurement; Packaging;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.120092

Filename

120092