DocumentCode :
1207886
Title :
Room temperature electroabsorption in a GexSi1-x PIN photodiode
Author :
Murtaza, Suhail ; Mayer, Rob ; Rashed, Mahbub ; Kinosky, David ; Maziar, Christine ; Banerjee, Sanjay ; Tasch, Al F. ; Campbell, Joe C. ; Bean, John C. ; Peticolas, Larry J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume :
41
Issue :
12
fYear :
1994
fDate :
12/1/1994 12:00:00 AM
Firstpage :
2297
Lastpage :
2300
Abstract :
We present room temperature electroabsorption measurements in a Ge 0.2Si0.8 pin photodiode. The results appear to be very similar to those reported earlier on GexSi1-x/Si multiple quantum wells
Keywords :
Ge-Si alloys; electroabsorption; p-i-n photodiodes; semiconductor materials; GexSi1-x; GeSi; PIN photodiode; intrinsic region; photocurrent; room temperature electroabsorption; Absorption; Artificial intelligence; Conducting materials; PIN photodiodes; Phonons; Photoconductivity; Plasma temperature; Semiconductor materials; Silicon; Temperature measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.337431
Filename :
337431
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1207886
بازگشت