Investigation of carrier generation in fully depleted enhancement and accumulation mode SOI MOSFET´s

Author

Sinha, Shankar P. ; Zaleski, Andrzej ; Ioannou, Dimitris E.

Author_Institution

Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA

Volume

41

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2413

Lastpage

2416

Abstract

An unified dual gate Zerbst-like technique has been developed to extract the generation lifetime in enhancement and accumulation mode fully depleted SOI MOSFET´s. The technique is based on the analysis of the temporal variation of the quasi Fermi levels in the devices, following the application of a suitable voltage step on one of the gates. The analysis resulted in simple Zerbst-like expressions for the drain current transients. Numerical simulations, using PISCES, have been performed to validate the technique and its underlying analysis. The technique has been applied to both kinds of typical fully depleted SIMOX SOI MOSFET´s and the measured generation lifetimes were in the range of 0.1 μs to 1.0 μs

Keywords

MOSFET; carrier lifetime; semiconductor device models; silicon-on-insulator; simulation; 0.1 to 1 mus; PISCES; SIMOX; SOI MOSFET; Si; accumulation mode; carrier generation; drain current transients; enhancement mode; fully depleted type; generation lifetime; numerical simulations; quasi Fermi levels; unified dual gate Zerbst-like technique; Capacitance measurement; Data mining; Helium; MOSFET circuits; Numerical simulation; Performance analysis; Semiconductor films; Silicon on insulator technology; Transient analysis; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.337457

Filename

337457