Title :
General drift-diffusion theory of the current density in Schottky diodes
Author :
Van Mieghem, Piet
Author_Institution :
Alcatel Bell, Antwerpen, Belgium
fDate :
12/1/1994 12:00:00 AM
Abstract :
A new general expression for the current in Schottky diodes due to drift-diffusion but neglecting tunneling is presented. A precise expression for the ideality factor is derived. The temperature dependence of important quantities in both the degenerate (heavy doping) and nondegenerate (Boltzmann) limit is examined. In the degenerate regime, the temperature independence of the saturation current is shown to complicate the extraction of the barrier height from the current-voltage characteristics
Keywords :
Schottky diodes; current density; doping profiles; heavily doped semiconductors; integral equations; Boltzmann limit; Schottky diodes; barrier height; current density; current-voltage characteristics; degenerate limit; drift-diffusion theory; heavy doping; ideality factor; nondegenerate limit; saturation current; temperature dependence; Current density; Current-voltage characteristics; Electron mobility; Integral equations; Schottky diodes; Semiconductor device doping; Statistics; Temperature; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
