A new approach to current-voltage characteristics formation for short-channel MOSFET´s

Author

Wong, H.

Author_Institution

Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong

Volume

41

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2480

Lastpage

2482

Abstract

A new approach to the current-voltage (I-V) characteristics formulation for short-channel MOSFET´s by incorporating the channel length modulation, mobility degradation, drain induced barrier lowering, and threshold voltage variation into Pao-Sah´s equation is presented. Results show that the calculated I-V characteristics agree well with the experimental ones for devices with effective channel length in the range of 0.44~20 μm. Compared with the existing models, the model has the advantages of less number of model parameters and simpler form of the current-voltage relationship

Keywords

MOSFET; carrier mobility; semiconductor device models; 0.44 to 20 micron; I-V characteristics; Pao-Sah equation; channel length modulation; current-voltage characteristics formation; drain induced barrier lowering; mobility degradation; model; short-channel MOSFET; threshold voltage variation; Capacitance; Current-voltage characteristics; Degradation; Intrusion detection; MOSFET circuits; Microelectronics; Poisson equations; Silicon compounds; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.337470

Filename

337470