Title :
Simulation of high-efficiency n+p indium phosphide solar cell results and future improvements
Author :
Jain, Raj K. ; Flood, Dennis J.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
fDate :
12/1/1994 12:00:00 AM
Abstract :
A simulation of the highest efficiency (19.1% AMO) n+p indium phosphide (InP) solar cell was made using a computer code PC-1D in order to understand it and suggest future improvements to it. Available cell design and process data was used in the simulation. Minority carrier diffusion lengths in the emitter and base have been varied to match the experimental cell I-V characteristics with the calculated results. To further understand and improve the InP cell efficiency, simulations were performed using improved values of cell material and process parameters. We show that the efficiency of this cell could be increased to more than 23% AMO by incorporating the suggested cell material, design and process improvements. At these high efficiencies InP cell technology will be very attractive for space use
Keywords :
III-V semiconductors; carrier lifetime; indium compounds; minority carriers; semiconductor device models; simulation; solar cells; 19.1 to 23 percent; InP; PC-1D; computer code; high-efficiency cell; minority carrier diffusion lengths; n+p solar cell; simulation; space use; Computational modeling; Computer simulation; Costs; Earth; Indium phosphide; NASA; Orbits; Photovoltaic cells; Process design; Space technology;
Journal_Title :
Electron Devices, IEEE Transactions on
