Title :
Spin relaxation in the channel of a spin field-effect transistor
Author :
Pramanik, Sandipan ; Bandyopadhyay, Supriyo ; Cahay, Marc
Author_Institution :
Dept. of Electr. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
Abstract :
We examine the major spin relaxation mechanism (D\´yakonov-Perel\´) in the channel of a spin field-effect transistor (SPINFET) and show analytically that it can be completely eliminated if the channel is a quantum wire and transport is strictly single moded (only the lowest subband is occupied). Single-moded transport also produces the largest "on" to "off" conductance ratio and the largest transconductance of the transistor.
Keywords :
electron spin-lattice relaxation; field effect transistors; magnetoelectronics; magnetoresistance; semiconductor quantum wires; spin polarised transport; D´yakonov-Perel relaxation; conductance ratio; multichanneled transport; quantum wire; single moded transport; spin field effect transistor; spin relaxation mechanism; spintronic device; transistor transconductance; Electrons; FETs; Magnetization; Magnetoelectronics; Polarization; Power dissipation; Temperature; Threshold voltage; Transconductance; Wire;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2004.840140
