Title :
Spin characterization and control over the regime of radiation-induced zero-resistance states
Author_Institution :
Gordon McKay Lab. of Appl. Sci., Harvard Univ., Cambridge, MA, USA
Abstract :
Over the regime of the radiation-induced zero-resistance states and associated oscillatory magnetoresistance, we propose a low-magnetic-field analog of quantum-Hall-limit techniques for the electrical detection of electron spin and nuclear magnetic resonance, dynamical nuclear polarization via electron spin resonance, and electrical characterization of the nuclear spin polarization via the Overhauser shift. In addition, beats observed in the radiation-induced oscillatory magnetoresistance are developed into a method to measure and control the zero-field spin splitting due to the Bychkov-Rashba and bulk inversion asymmetry terms in the high-mobility GaAs-AlGaAs system.
Keywords :
Hall mobility; III-V semiconductors; Overhauser effect; aluminium compounds; electron spin polarisation; gallium arsenide; gallium compounds; magnetoresistance; nuclear magnetic resonance; nuclear polarisation; paramagnetic resonance; quantum Hall effect; spin dynamics; Bychkov Rashba inversion asymmetry; GaAs-AlGaAs; Overhauser shift; bulk inversion asymmetry; dynamical nuclear polarization; electrical detection; electron spin resonance; high mobility GaAs-AlGaAs system; nuclear magnetic resonance; nuclear spin polarization; oscillatory magnetoresistance; quantum Hall limit method; radiation induced zero resistance states; spin characterization; zero field spin splitting; Control systems; Magnetic field measurement; Magnetoelectronics; Magnetoresistance; Paramagnetic resonance; Polarization; Quantum computing; Radiation detectors; Radio frequency; Semiconductor device measurement;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2004.840147