Growth and the microstructural and ferroelectric characterization of oriented BaMgF/sub 4/ thin films

Author

Sinharoy, S. ; Buhay, H. ; Burke, M.G. ; Lampe, D.R. ; Pollak, T.M.

Author_Institution

Westinghouse Sci. & Technol. Center, Pittsburgh, PA, USA

Volume

38

Issue

6

fYear

1991

Firstpage

663

Lastpage

671

Abstract

The growth of ferroelectric BaMgF/sub 4/ thin films on Si

Keywords

barium compounds; crystal microstructure; dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric storage; ferroelectric thin films; transmission electron microscope examination of materials; vacuum deposited coatings; 480 nm; Al/sub 2/O/sub 3/; MIS gate structure; Si; TEM; capacitance voltage measurements; coercivity; electrical contacts; ferroelectric characterization; ferroelectric hysteresis; ferroelectric memory field-effect transistor; growth; impurities; memory window; microstructural characterisation; oriented BaMgF/sub 4/ thin films; oriented crystalline films; polar axis orientation; programming voltage; sapphire substrate; spontaneous polarization; transmission electron microscopy; ultrahigh vacuum conditions; Coercive force; Crystal microstructure; Crystallization; Ferroelectric films; Ferroelectric materials; Hysteresis; Polarization; Substrates; Transistors; Transmission electron microscopy;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.108867

Filename

108867