A capacitively coupled SFQ Josephson memory cell

Author

Suzuki, Hideo ; Hasuo, Shinya

Author_Institution

Fujitsu Ltd., Atsugi, Japan

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

1137

Lastpage

1143

Abstract

The design and experimental results for a novel type of Josephson memory cell are presented. The cell has a simpler construction than the conventional Henkels-type, using a one-junction SQUID (superconducting quantum interference device) capacitively coupled to a single junction. Binary data are stored as single flux quanta and are destructively read out by sensing a pulse caused by a vortex-mode transition. Computer simulations suggest that the read operation could be performed with a bias margin for the sense junction of ±28% and that the rise time of the sense current in a 16-bit memory cell would be as fast as 30 ps, despite having to sense a vortex-mode transition. Results are presented for a memory cell fabricated with Nb-AlO_x-Nb junctions

Keywords

Josephson effect; superconducting junction devices; superconducting memory circuits; Josephson memory cell; Nb-AlO_x-Nb junctions; SFQ type; capacitively coupled; destructive readout; single flux quanta; superconducting junction device; vortex-mode transition; Capacitors; Circuits; Computer industry; Computer simulation; Flip-flops; Interference; International trade; Niobium; Research and development; SQUIDs;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3375

Filename

3375