DocumentCode :
1208428
Title :
A capacitively coupled SFQ Josephson memory cell
Author :
Suzuki, Hideo ; Hasuo, Shinya
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
Volume :
35
Issue :
7
fYear :
1988
fDate :
7/1/1988 12:00:00 AM
Firstpage :
1137
Lastpage :
1143
Abstract :
The design and experimental results for a novel type of Josephson memory cell are presented. The cell has a simpler construction than the conventional Henkels-type, using a one-junction SQUID (superconducting quantum interference device) capacitively coupled to a single junction. Binary data are stored as single flux quanta and are destructively read out by sensing a pulse caused by a vortex-mode transition. Computer simulations suggest that the read operation could be performed with a bias margin for the sense junction of ±28% and that the rise time of the sense current in a 16-bit memory cell would be as fast as 30 ps, despite having to sense a vortex-mode transition. Results are presented for a memory cell fabricated with Nb-AlOx-Nb junctions
Keywords :
Josephson effect; superconducting junction devices; superconducting memory circuits; Josephson memory cell; Nb-AlOx-Nb junctions; SFQ type; capacitively coupled; destructive readout; single flux quanta; superconducting junction device; vortex-mode transition; Capacitors; Circuits; Computer industry; Computer simulation; Flip-flops; Interference; International trade; Niobium; Research and development; SQUIDs;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.3375
Filename :
3375
Link To Document :
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