Compensation effects on the electron velocity in submicrometer GaAs MESFETs

Author

Grotjohn, Timothy A.

Author_Institution

Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

1144

Lastpage

1145

Abstract

The transient overshoot of the electron velocity for compensation GaAs is calculated using the Monte Carlo method. The transient electron velocity characteristics are compared for various compensation ratios. The influence of the compensation ratio on the GaAs MESFET structure was simulated using a two-dimensional Monte Carlo simulator. The drain current, transconductance, and channel electron velocity of submicrometer MESFETs are presented for various compensation ratios

Keywords

III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; compensation; gallium arsenide; semiconductor device models; transient response; GaAs; III-V semiconductors; Monte Carlo method; channel electron velocity; compensation ratio; drain current; electron velocity characteristics; submicrometer MESFETs; transconductance; transient overshoot; two-dimensional Monte Carlo simulator; Conducting materials; Electron mobility; Gallium arsenide; Impurities; MESFETs; Monte Carlo methods; Particle scattering; Steady-state; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3376

Filename

3376