Title :
Static characteristics of 2.3-nm gate-oxide MOSFETs
Author :
Nagai, Kiyoko ; Hayashi, Yutaka
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fDate :
7/1/1988 12:00:00 AM
Abstract :
The static characteristics of experimentally fabricated 2.3-nm gate-oxide MOSFETs were reasonably fitted from the subthreshold to postthreshold region by a Pao-Sah double-integral MOSFET model modified with field-dependent mobility. Gate leakage current was negligibly small compared to drain current at the threshold voltage
Keywords :
insulated gate field effect transistors; semiconductor device models; 2.3 nm; MOSFET model; Pao-Sah double integral model; drain current; field-dependent mobility; gate leakage current; gate-oxide; postthreshold region; static characteristics; subthreshold region; threshold voltage; Electron devices; Gallium arsenide; Leakage current; MESFETs; MOSFETs; Monte Carlo methods; Packaging; Semiconductor devices; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
